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STGWA75M65DF2 数据表 (PDF) - STMicroelectronics
STGWA75M65DF2 Datasheet PDF - STMicroelectronics
部件名 STGWA75M65DF2
下载  STGWA75M65DF2 下载
文件大小   1005.21 Kbytes
页   17 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Trench gate field-stop IGBT, M series 650 V, 75 A low loss

STGWA75M65DF2 Datasheet (PDF)

Go To PDF Page 下载 数据表
STGWA75M65DF2 Datasheet PDF - STMicroelectronics

部件名 STGWA75M65DF2
下载  STGWA75M65DF2 Click to download

文件大小   1005.21 Kbytes
页   17 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Trench gate field-stop IGBT, M series 650 V, 75 A low loss

STGWA75M65DF2 数据表 (HTML) - STMicroelectronics


STGWA75M65DF2 产品详情

Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.




类似零件编号 - STGWA75M65DF2

制造商部件名数据表功能描述
logo
STMicroelectronics		 STGWA75H65DFB2 STMICROELECTRONICS-STGWA75H65DFB2 Datasheet
560Kb / 15P		 Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package
13-Feb-2020
More results


类似说明 - STGWA75M65DF2

制造商部件名数据表功能描述
logo
STMicroelectronics		 STGB15M65DF2 STMICROELECTRONICS-STGB15M65DF2 Datasheet
1Mb / 19P		 Trench gate field-stop IGBT M series, 650 V, 15 A low loss
13-Nov-2015
STGB10M65DF2 STMICROELECTRONICS-STGB10M65DF2 Datasheet
1Mb / 20P		 Trench gate field-stop IGBT, M series 650 V, 10 A low loss
20-Oct-2015
STGF15M65DF2 STMICROELECTRONICS-STGF15M65DF2 Datasheet
910Kb / 15P		 Trench gate field-stop IGBT M series, 650 V 15 A low loss
14-Oct-2015
STGB4M65DF2 STMICROELECTRONICS-STGB4M65DF2 Datasheet
1Mb / 18P		 Trench gate field-stop IGBT, M series 650 V, 4 A low loss
21-Nov-2016
STGD4M65DF2 STMICROELECTRONICS-STGD4M65DF2 Datasheet
1Mb / 19P		 Trench gate field-stop IGBT, M series 650 V, 4 A low loss
21-Nov-2016
STGF4M65DF2 STMICROELECTRONICS-STGF4M65DF2 Datasheet
983Kb / 16P		 Trench gate field-stop IGBT, M series 650 V, 4 A low loss
21-Nov-2016
STGWA50M65DF2 STMICROELECTRONICS-STGWA50M65DF2 Datasheet
971Kb / 16P		 Trench gate field-stop IGBT, M series 650 V, 50 A low loss
14-Jun-2016
STGYA120M65DF2 STMICROELECTRONICS-STGYA120M65DF2 Datasheet
958Kb / 16P		 Trench gate field-stop IGBT, M series 650 V, 120 A low loss
12-Aug-2016
STGP20M65DF2 STMICROELECTRONICS-STGP20M65DF2 Datasheet
520Kb / 16P		 Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT
08-Oct-2018
STGD4M65DF2 STMICROELECTRONICS-STGD4M65DF2_V01 Datasheet
448Kb / 20P		 Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT
05-Dec-2018
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关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在1​​00多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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