STGW75M65DF2, STGWA75M65DF2

Electrical characteristics

DocID028695 Rev 2

5/17

Table 6: IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

Ω

(see Figure 29: " Test

circuit for inductive load

switching" )

47

-

ns

Current rise time

22.4

-

ns

Turn-on current slope

2680

-

A/µs

Turn-off-delay time

125

-

ns

Current fall time

93

-

ns

Eon(1)

Turn-on switching energy

0.69

-

mJ

Turn-off switching energy

2.54

-

mJ

Total switching energy

3.23

-

mJ

Turn-on delay time

3.3 Ω

29: " Test circuit for

inductive load switching" )

48

-

ns

Current rise time

25

-

ns

Turn-on current slope

2420

-

A/µs

Turn-off-delay time

125

-

ns

Current fall time

167

-

ns

Eon(1)

Turn-on switching energy

2.17

-

mJ

Turn-off switching energy

3.45

-

mJ

Total switching energy

5.62

-

mJ

Short-circuit withstand time

≤ 150 °C

10

-

µs

≤ 150 °C

6

Notes:

Table 7: Diode switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Reverse recovery time

Test circuit for inductive load

switching") di/dt = 1000 A/µs

-

165

-

ns

Reverse recovery charge

-

1.72

-

µC

Reverse recovery current

-

25

-

A

Peak rate of fall of reverse

-

750

-

A/µs

Reverse recovery energy

-

289

-

µJ

Reverse recovery time

(see Figure 29: " Test circuit

for inductive load switching")

di/dt = 1000 A/µs

-

256

-

ns

Reverse recovery charge

-

6.85

-

µC

Reverse recovery current

-

48

-

A

Peak rate of fall of reverse

-

300

-

A/µs

Reverse recovery energy

-

1033

-

µJ