The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

• Typical 2-Carrier N-CDMA Performance for VDD = 26 Volts,
   IDQ = 850 mA, Pout = 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz
   IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
   1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
   over a 30 kHz Bandwidth at f1 -885 Khz and f2 +885 kHz. Distortion
   Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and
   f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
      Output Power — 18 Watts Avg.
      Power Gain — 13.0 dB
      Efficiency — 23%
      ACPR — -51 dB
      IM3 — -36.5 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.