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MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3

MOTOROLA RF DEVICE DATA

The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from

1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier

applications.

IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)

1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured

over a 30 kHz Bandwidth at f1 -885 Khz and f2 +885 kHz. Distortion

Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and

f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.

Output Power — 18 Watts Avg.

Power Gain — 13.0 dB

Efficiency — 23%

ACPR — -51 dB

IM3 — -36.5 dBc

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain-Source Voltage

65

Vdc

Gate-Source Voltage

-0.5, +15

Vdc

Derate above 25°C

273

1.56

Watts

W/°C

Storage Temperature Range

- 65 to +150

°C

Operating Junction Temperature

200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value (1)

Unit

Thermal Resistance, Junction to Case

0.79

°C/W

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

1 (Minimum)

Machine Model

M3 (Minimum)

(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.

Select Documentation/Application Notes - AN1955.

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Order this document

by MRF19085/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF19085R3

MRF19085LR3

MRF19085SR3

MRF19085LSR3

1990 MHz, 90 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFETs

CASE 465-06, STYLE 1

NI-780

MRF19085R3,MRF19085LR3

CASE 465A-06, STYLE 1

NI-780S

MRF19085SR3, MRF19085LSR3

REV 6

Freescale Semiconductor, Inc.

For More Information On This Product,

Go to: www.freescale.com