STB33N60M2 数据表(PDF) - STMicroelectronics

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STB33N60M2 数据表 (PDF) - STMicroelectronics

STB33N60M2 Datasheet PDF - STMicroelectronics


部件名	STB33N60M2

下载	STB33N60M2 下载

文件大小	1059.38 Kbytes

页	15 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus™ low Qg Power MOSFETs in a D2PAK package

STB33N60M2 Datasheet (PDF)

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STB33N60M2 Datasheet PDF - STMicroelectronics


部件名	STB33N60M2

下载	STB33N60M2 Click to download

文件大小	1059.38 Kbytes

页	15 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus™ low Qg Power MOSFETs in a D2PAK package

STB33N60M2 数据表 (HTML) - STMicroelectronics

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STB33N60M2 产品详情

Description
This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 1 3 TAB D PAK 2 AM15572v1 , TAB

Features
■ Extremely low gate charge
■ Lower RDS(on) x area vs previous generation
■ MDmesh™ II technology
■ Low gate input resistance
■ 100% avalanche tested
■ Zener-protected

Applications
■ Switching applications
■ LCC converters, resonant converters

类似零件编号 - STB33N60M2

制造商	部件名	数据表	功能描述
STMicroelectronics	STB33N60DM2	1Mb / 20P	N-channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2 Power MOSFET in D²PAK, TO-220 and TO-247 packages November 2015 Rev 2
Inchange Semiconductor ...	STB33N60DM2	336Kb / 2P	N-Channel MOSFET Transistor
STMicroelectronics	STB33N60DM6	424Kb / 14P	N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET in a D2PAK package 02-Jul-2020

类似说明 - STB33N60M2

制造商	部件名	数据表	功能描述
STMicroelectronics	STB24N60M2	1Mb / 22P	N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK 28-May-2013
	STB10N60M2	1Mb / 24P	N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D짼PAK 06-Dec-2013
	STF28N60M2	827Kb / 15P	N-channel 600 V, 0.135 typ., 22 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAKFP packages 29-Jan-2014
	STF40N60M2	1Mb / 22P	N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages 13-May-2014
	STFI40N60M2	1Mb / 21P	N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages 13-May-2014
	STL24N60M2	1Mb / 16P	N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV package
	STW33N60M2	1Mb / 20P	N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages November 2013 Rev 2
	STL18N60M2	946Kb / 16P	N-channel 600 V, 0.278 Ω typ., 9 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package 12-Jun-2014
	STL9N60M2	1Mb / 16P	N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package 17-Mar-2014
	STL10N60M2	1Mb / 16P	N-channel 600 V, 0.580 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package March 2014 Rev 2

关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在100多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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