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STB33N60M2 数据表(PDF) 7 Page - STMicroelectronics

部件名 STB33N60M2
功能描述  N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus™ low Qg Power MOSFETs in a D2PAK package
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB33N60M2 数据表(HTML) 7 Page - STMicroelectronics

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DocID025253 Rev 2
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STB33N60M2
Electrical characteristics
15
Figure 8. Capacitance variations
Figure 9. Output capacitance stored energy
Figure 10. Normalized gate threshold voltage vs
temperature
Figure 11. Normalized on-resistance vs
temperature
Figure 12. Normalized VDS vs temperature
Figure 13. Source-drain diode forward
characteristics
C
1000
100
10
1
0.1
10
VDS(V)
(pF)
1
100
Ciss
Coss
Crss
10000
AM17911v1
Eoss
4
2
0
0
100
VDS(V)
(µJ)
400
200
300
6
500
600
8
10
12
AM17912v1
VGS(th)
1.0
0.9
0.8
0.7
-50
0
TJ(°C)
(norm)
-25
1.1
75
25
50
100
ID=250µA
AM17913v1
RDS(on)
1.9
1.3
0.9
0.5
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
0.7
1.1
1.5
1.7
2.1
2.3
ID=13A
VDS=10V
AM17914v1
VDS
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
0.91
0.93
0.95
0.97
0.99
1.01
1.03
1.05
ID=1mA
1.07
1.09
AM17915v1
VSD
0
4
ISD(A)
(V)
2
10
6 8
0
0.2
0.4
0.6
TJ=-50°C
TJ=150°C
TJ=25°C
0.8
1
12 14 16 18 20 22 24
1.2
1.4
AM17916v1



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