| 制造商 | 部件名 | 数据表 | 功能描述 |
 Infineon Technologies A... |
PXFC193808SV
|
196Kb / 10P |
Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 ??1880 MHz
Rev. 02.1, 2015-01-13 |
|
PXAC182002FC
|
1Mb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
Rev. 02.3, 2016-06-17 |
|
PXAD184218FV
|
339Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 ??1880 MHz
Rev. 02.1, 2016-12-07 |
 Cree, Inc |
PXAE183708NB
|
486Kb / 6P |
Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 1805 ??1880 MHz
|
|
PXAE184408NB
|
1Mb / 6P |
Thermally-Enhanced High Power RF LDMOS FET 450 W, 28 V, 1805 ??1880 MHz
|
|
PXAC182908FV
|
515Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1805 ??1880 MHz
|
|
PXAD184218FV
|
465Kb / 9P |
Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 ??1880 MHz
|
|
PTFB181702FC
|
554Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 1805 ??1880 MHz
|
|
PXFE181507FC
|
550Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 ??1880 MHz
|
 WOLFSPEED, INC. |
PXFE181507FC
|
695Kb / 8P |
Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz
Rev. 04, 2023-06-28 |