PXAC182002FC datasheet(1/8 Pages) CREE

部件名	PXAC182002FC

功能描述	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz

PDF	8 Pages

Scroll/Zoom	100%

制造商	CREE [Cree, Inc]

网页	http://www.cree.com/

标志

1 / 8 page

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 03, 2018-06-25

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

PXAC182002FC

Thermally-Enhanced High Power RF LDMOS FET

180 W, 28 V, 1805 – 1880 MHz

Description

The PXAC182002FC is a 180-watt LDMOS FET with an asymmetri-

cal design intended for use in multi-standard cellular power amplifier

applications in the 1805 to 1880 MHz frequency band. Features

include dual-path design, input and output matching, high gain and

thermally-enhanced package with earless flanges. Manufactured

with Wolfspeed's advanced LDMOS process, this device provides

excellent thermal performance and superior reliability.

PXAC182002FC

Package H-37248-4

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)

VDD = 28 V, IDQ = 400 mA, VGSPEAK = 1.1 V, POUT = 28.2 W avg, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84

MHz, peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

15.5

16.5

—

dB

Drain Efficiency

hD

48.5

51

—

%

Adjancent Channel Power Ratio

ACPR

—

–30

–26

dBc

Features

• Broadband internal input and output matching

• Asymmetrical Doherty design

- Main: 70 W Typ (P1dB)

- Peak: 110 W Typ (P1dB)

• Typical pulsed CW performance, 1880 MHz, 28 V,

combined outputs

- Output power at P3dB = 194 W

- Efficiency = 64%

- Gain = 14 dB

• Capable of handling 10:1 VSWR @28 V, 110 W

(CW) output power

• Integrated ESD protection

• Human Body Model Class 1C (per ANSI/ESDA/

JEDEC/JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 28 V, IDQ = 400 mA, ƒ = 1880 MHz,

3GPP WCDMA signal,

PAR = 10 dB, 3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

c182002fc_g1

类似零件编号 - PXAC182002FC

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PXAC182002FC	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET Rev. 02.2, 2015-06-05
	PXAC182002FC	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz Rev. 02.3, 2016-06-17
	PXAC182002FCV1R0	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz Rev. 02.3, 2016-06-17
	PXAC182002FCV1R0XTMA1	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz Rev. 02.3, 2016-06-17
	PXAC182002FCV1R250	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz Rev. 02.3, 2016-06-17

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类似说明 - PXAC182002FC

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PXFC193808SV	196Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 ??1880 MHz Rev. 02.1, 2015-01-13
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