| 制造商 | 部件名 | 数据表 | 功能描述 |
 STMicroelectronics |
STL57N65M5
|
1Mb / 16P |
N-channel 650 V, 0.061 廓 typ., 22.5 A MDmesh??V Power MOSFET in a PowerFLAT??8x8 HV package
25-Jan-2013 |
|
STL36N55M5
|
1Mb / 17P |
N-channel 550 V, 0.066 typ., 22.5 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV package
24-Jan-2013 |
|
STL24N60M2
|
1Mb / 16P |
N-channel 600 V, 0.186 typ., 18 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT 8x8 HV package
|
|
STL23NM50N
|
659Kb / 13P |
N-channel 500 V, 0.170 typ., 14 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package
08-Oct-2012 |
|
STL33N65M2
|
815Kb / 15P |
N-channel 650 V, 0.124 (ohm0 typ., 20 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package
13-Apr-2016 |
|
STL45N65M5
|
878Kb / 16P |
N-channel 650 V, 0.075 Ω typ., 22.5 A MDmesh™ M5 Power MOSFET in a PowerFLAT™ 8x8 HV package
October 2015 Rev 2 |
|
SCTL35N65G2V
|
323Kb / 14P |
Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 40 A in a PowerFLAT 8x8 HV package
02-Dec-2020 |
|
STL26N65DM2
|
385Kb / 15P |
N-channel 650 V, 0.182 typ., 20 A, MDmesh™ DM2 Power MOSFET in a PowerFLAT™ 8x8 HV package
July 2018 Rev 1 |
|
SCTW90N65G2V
|
402Kb / 12P |
Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C)in an HiP247 package
DS11832 - Rev 5 - July 2019 |
|
SCTHS250N65G3
|
301Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 207 A in a STPAK package
05-Oct-2022 |