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SCTHS250N65G3 数据表 (PDF) - STMicroelectronics
SCTHS250N65G3 Datasheet PDF - STMicroelectronics
部件名 SCTHS250N65G3
下载  SCTHS250N65G3 下载
文件大小   301.65 Kbytes
页   12 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 207 A in a STPAK package

SCTHS250N65G3 Datasheet (PDF)

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SCTHS250N65G3 Datasheet PDF - STMicroelectronics

部件名 SCTHS250N65G3
下载  SCTHS250N65G3 Click to download

文件大小   301.65 Kbytes
页   12 Pages
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics
功能描述 Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 207 A in a STPAK package

SCTHS250N65G3 数据表 (HTML) - STMicroelectronics


SCTHS250N65G3 产品详情

Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Source sensing pin for increased efficiency
Application
• Main inverter (electric traction)
Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 3rd generation SiC MOSFET technology. The device
features a very low RDS(on) over the entire temperature range combined with
low capacitances and very high switching operations, which improve application
performance in frequency, energy efficiency, system size and weight reduction.




类似零件编号 - SCTHS250N65G3

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类似说明 - SCTHS250N65G3

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关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在1​​00多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。




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