SCTHS250N120G3AG 数据表(PDF) - STMicroelectronics

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SCTHS250N120G3AG 数据表 (PDF) - STMicroelectronics

SCTHS250N120G3AG Datasheet PDF - STMicroelectronics


部件名	SCTHS250N120G3AG

下载	SCTHS250N120G3AG 下载

文件大小	323.6 Kbytes

页	11 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mΩ typ., 239 A in a STPAK package

SCTHS250N120G3AG Datasheet (PDF)

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SCTHS250N120G3AG Datasheet PDF - STMicroelectronics


部件名	SCTHS250N120G3AG

下载	SCTHS250N120G3AG Click to download

文件大小	323.6 Kbytes

页	11 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mΩ typ., 239 A in a STPAK package

SCTHS250N120G3AG 数据表 (HTML) - STMicroelectronics

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SCTHS250N120G3AG 产品详情

Features
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Very high operating junction temperature capability (TJ = 200 °C)
• Source sensing pin for increased efficiency

Application
• Main inverter (electric traction)

Description
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 3rd generation SiC MOSFET technology. The device
features a very low RDS(on) over the entire temperature range combined with low
capacitances and very high switching operations, which improve application
performance in frequency, energy efficiency, system size and weight reduction.

类似零件编号 - SCTHS250N120G3AG

制造商	部件名	数据表	功能描述
STMicroelectronics	SCTHS250N65G3	301Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 207 A in a STPAK package 05-Oct-2022
	SCTHS250N65G3AG	301Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 207 A in a STPAK package 05-Oct-2022
	SCTHS250N65G3TAG	301Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 207 A in a STPAK package 05-Oct-2022

类似说明 - SCTHS250N120G3AG

制造商	部件名	数据表	功能描述
STMicroelectronics	SCTW60N120G2AG	197Kb / 11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package 18-May-2020
	SCTWA40N120G2AG	257Kb / 12P	Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package 22-Nov-2021
	SCTWA60N120G2AG	242Kb / 12P	Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package 16-Dec-2020
	SCTWA70N120G2V	229Kb / 12P	Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A 10-Oct-2022
	SCT020H120G3AG	362Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package 27-Sep-2022
	SCT025H120G3AG	369Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package 28-Nov-2022
	SCT040H120G3AG	386Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package 14-Oct-2022
	SCT070H120G3AG	396Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an H²PAK-7 package 04-Apr-2023
	SCTH60N120G2-7AG	356Kb / 14P	Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 55 A in an H²PAK-7 package 02-Aug-2021
	SCTHS250N65G3	301Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mΩ typ., 207 A in a STPAK package 05-Oct-2022

关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在100多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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