ISC3581AS1 pdf, ISC3581AS1 功能描述, ISC3581AS1 数据表, ISC3581AS1 view ::: ALLDATASHEET :::

部件名	ISC3581AS1

功能描述	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

文件大小	157.25 Kbytes

Html View	1 2 3

制造商	ISAHAYA [Isahaya Electronics Corporation]

网页	http://www.idc-com.co.jp

标志

类似零件编号 - ISC3581AS1

制造商	部件名	数据表	功能描述
Burr-Brown (TI)	ISC300	100Kb / 11P	Universal Precision Isolated MEASUREMENT CHANNEL
Infineon Technologies A...	ISC320N12LM6	1Mb / 11P	MOSFET OptiMOSTM 6 Power-Transistor, 120 V Rev. 2.0, 2023-10-11
Infineon Technologies A...	ISC320N12LM6ATMA1	1Mb / 11P	MOSFET OptiMOSTM 6 Power-Transistor, 120 V Rev. 2.0, 2023-10-11
Isahaya Electronics Cor...	ISC3242AS1	240Kb / 4P	FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics Cor...	ISC3244AS1	163Kb / 4P	FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

制造商	部件名	数据表	功能描述
Isahaya Electronics Cor...	2SA2166	148Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
	2SC6046	69Kb / 4P	GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC3441	131Kb / 3P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC6046	114Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC6120	111Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	INC1001AC1	115Kb / 2P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	ISC6046AU1	132Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	ISC6053AU1	197Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	ISC6053AM1	157Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	RT3C77M	129Kb / 2P	Composite Transistor For General Purpose High Current Drive Application Silicon NPN Epitaxial Type