ISC3581AS1 datasheet(1/3 Pages) ISAHAYA

部件名	ISC3581AS1

功能描述	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISAHAYA [Isahaya Electronics Corporation]

网页	http://www.idc-com.co.jp

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〈SMALL-SIGNAL TRANSISTOR〉

ISC3581AS1

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION

SILICON NPN EPITAXIAL TYPE

ISAHAYA ELECTRONICS CORPORATION

DESCRIPTION

ISC3581AS1 is a silicon NPN epitaxial type transistor

designed for high collector current application.

Complementary with ISA1399AS1.

FEATURE

●High collector current.

I

CM=600mA

●High gain band width product. fT=150MHz typ

●High V

CEO.

V

CEO=50V

●Excellent linearity of DC forward current gain.

APPLICATION

For switching, small type motor drive application.

.

※） It shows hFE classification in right table.

OUTLINE DRAWING

Unit：ｍｍ

MAXIMUM RATINGS（Ta=25℃）

Symbol

Parameter

Ratings

Unit

VCBO

Collector to Base voltage

55

V

VEBO

Emitter to Base voltage

4

V

VCEO

Collector to Emitter voltage

50

V

I

C

Collector current

400

mA

I

CM

Peak collector current

600

mA

P

c

Collector dissipation

600

mW

T

j

Junction temperature

+150

℃

T

stg

Storage temperature

-55～+150

℃

D

E

F

90～180

150～300

250～500

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Symbol

Parameter

Test conditions

Limits

Unit

Min

Typ

Max

V(BR)CBO

C to B break down voltage

I

C= 10μA , IE =0mA

55

-

V

V(BR)EBO

E to B break down voltage

I

E= 10μA , IC =0mA

4

-

V

V(BR)CEO

C to E break down voltage

I

C= 100μA , RBE= ∞

50

-

V

ICBO

Collector cut off current

V

CB= 25V , I E= 0mA

-

1

μA

IEBO

Emitter cut off current

V

EB=2V , I C= 0mA

-

1

μA

hFE※

DC forward current gain

V

CE = 4V , IC= 100mA

90

-

500

-

VCE(sat)

C to E Saturation Voltage

I

C=200mA , I B= 10mA

-

0.15

0.5

V

fT

Gain band width product

V

CE=6V , I E= -10mA

-

150

-

MHz

JEITA：-

JEDEC：-

TERMINAL CONNECTER

①：EMITTER

②：COLLECTOR

③：BASE

4.0

2.5

0.45

0.1

①

②

③

MARKING

5 8 1

□□

F

Type name

hFE ITEM

Lot No

类似零件编号 - ISC3581AS1

制造商	部件名	数据表	功能描述
Burr-Brown (TI)	ISC300	100Kb / 11P	Universal Precision Isolated MEASUREMENT CHANNEL
Infineon Technologies A...	ISC320N12LM6	1Mb / 11P	MOSFET OptiMOSTM 6 Power-Transistor, 120 V Rev. 2.0, 2023-10-11
Infineon Technologies A...	ISC320N12LM6ATMA1	1Mb / 11P	MOSFET OptiMOSTM 6 Power-Transistor, 120 V Rev. 2.0, 2023-10-11
Isahaya Electronics Cor...	ISC3242AS1	240Kb / 4P	FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
Isahaya Electronics Cor...	ISC3244AS1	163Kb / 4P	FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

More results

类似说明 - ISC3581AS1

制造商	部件名	数据表	功能描述
Isahaya Electronics Cor...	2SA2166	148Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
	2SC6046	69Kb / 4P	GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC3441	131Kb / 3P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC6046	114Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	2SC6120	111Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	INC1001AC1	115Kb / 2P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	ISC6046AU1	132Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	ISC6053AU1	197Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	ISC6053AM1	157Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
	RT3C77M	129Kb / 2P	Composite Transistor For General Purpose High Current Drive Application Silicon NPN Epitaxial Type

More results

ISC3581AS1 数据表(PDF) 1 Page - Isahaya Electronics Corporation

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类似零件编号 - ISC3581AS1

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类似零件编号 - ISC3581AS1

类似说明 - ISC3581AS1

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