IPL60R255P6 pdf, IPL60R255P6 功能描述, IPL60R255P6 数据表, IPL60R255P6 view ::: ALLDATASHEET :::

部件名	IPL60R255P6

功能描述	Increased MOSFET dv/dt ruggedness

文件大小	1624.69 Kbytes

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制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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类似零件编号 - IPL60R255P6

制造商	部件名	数据表	功能描述
Infineon Technologies A...	IPL60R210P6	1Mb / 15P	600V CoolMOS™ P6 Power Transistor Rev. 2.0, 2014-05-16
	IPL60R225CFD7	1Mb / 14P	MOSFET 600V CoolMOS짧 CFD7 Power Transistor Rev. 2.0, 2019-06-04
	IPL60R225CFD7	4Mb / 44P	3300 W 54 V bi-directional phase-shift fullbridge with 600 V CoolMOS CFD7 and XMC Revision 1.0 2018-05-02
	IPL60R285P7	1Mb / 14P	600V CoolMOS짧 P7 Power Transistor Rev.2.0,2017-09-19
	IPL60R299CP	1Mb / 13P	600V CoolMOS CP Power Transistor Rev. 2.0, 2010-10-01

制造商	部件名	数据表	功能描述
Infineon Technologies A...	IPA60R099P6	2Mb / 18P	Increased MOSFET dv/dt ruggedness Rev.2.1,2015-05-18
	IPA60R125P6	2Mb / 18P	Increased MOSFET dv/dt ruggedness Rev.2.0,2014-03-07
	IPL65R070C7	1Mb / 15P	Increased MOSFET dv/dt ruggedness Rev.2.0,2013-11-06
	IPL65R099C7	1Mb / 15P	Increased MOSFET dv/dt ruggedness Rev.2.0,2013-11-05
	IPL65R195C7	1Mb / 15P	Increased MOSFET dv/dt ruggedness Rev.2.0,2013-11-06
STMicroelectronics	STP35N60DM2	733Kb / 13P	Extremely high dv/dt ruggedness 10-Sep-2015
	STP43N60DM2	422Kb / 13P	Extremely high dv/dt ruggedness 02-Jul-2015
	STW18N60DM2	711Kb / 12P	Extremely high dv/dt ruggedness 28-Jan-2016
	STF35N60DM2	691Kb / 13P	Extremely high dv/dt ruggedness 15-Sep-2015
	STW70N60DM2	724Kb / 12P	Extremely high dv/dt ruggedness 09-Dec-2015