IPA60R099P6 pdf, IPA60R099P6 功能描述, IPA60R099P6 数据表, IPA60R099P6 view ::: ALLDATASHEET :::

部件名	IPA60R099P6

功能描述	Increased MOSFET dv/dt ruggedness

文件大小	2275.98 Kbytes

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制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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类似零件编号 - IPA60R099P6

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	IPA60R099P6	267Kb / 2P	Isc N-Channel MOSFET Transistor
Infineon Technologies A...	IPA60R099P6	2Mb / 18P	600V CoolMOS??P6 Power Transistor Rev.2.1,2015-05-18

制造商	部件名	数据表	功能描述
Infineon Technologies A...	IPL60R255P6	1Mb / 15P	Increased MOSFET dv/dt ruggedness Rev.2.0,2014-05-16
	IPA60R125P6	2Mb / 18P	Increased MOSFET dv/dt ruggedness Rev.2.0,2014-03-07
	IPL65R070C7	1Mb / 15P	Increased MOSFET dv/dt ruggedness Rev.2.0,2013-11-06
	IPL65R099C7	1Mb / 15P	Increased MOSFET dv/dt ruggedness Rev.2.0,2013-11-05
	IPL65R195C7	1Mb / 15P	Increased MOSFET dv/dt ruggedness Rev.2.0,2013-11-06
STMicroelectronics	STP35N60DM2	733Kb / 13P	Extremely high dv/dt ruggedness 10-Sep-2015
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