| 制造商 | 部件名 | 数据表 | 功能描述 |
 Vaishali Semiconductor |
3N187
|
486Kb / 8P |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
|
 Intersil Corporation |
3N200
|
383Kb / 6P |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR
|
 List of Unclassifed Man... |
3N153
|
148Kb / 3P |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
|
 Motorola, Inc |
MTW6N60E
|
69Kb / 2P |
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
|
MTP2N20
|
176Kb / 5P |
POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE
|
|
MTD2N20
|
191Kb / 6P |
POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE
|
|
MTP15N05E
|
172Kb / 5P |
POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE
|
 GE Solid State |
3N206
|
363Kb / 8P |
Silicon Dual Insulated-Gate Field-Effect Transistors
|
 New Jersey Semi-Conduct... |
3N128
|
153Kb / 1P |
N-CHANNEL INSULATED-GATE DEPLETION-TYPE FIELD-EFFECT TRANSISTOR
|
 List of Unclassifed Man... |
3SK40
|
70Kb / 1P |
N-CHANNEL SILICON CUAL-GATE MOS FIELD-EFFECT TRANSISTOR
|