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LED545-33 数据表(PDF) 1 Page - Roithner LaserTechnik GmbH |
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LED545-33 数据表(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 4 page ![]() www.roithner-laser.com 1 LED545-33 v 1.1 30.08.2017 Description LED545-33 contains a InGaN LED mounted on a lead frame hermetically sealed with a clear epoxy lens. On forward bias, it emits a power radiation of typical 3.2 mW at a peak wavelength at 545 nm. Maximum Ratings (T CASE =25°C) Parameter Symbol Values Min. Max. Unit Power Dissipation PD 190 mW Forward Current IF 50 mA Pulse Forward Current *1 IFP 100 mA Reverse Voltage VF 5 V Thermal Resistance RTHJA 300 K/W Junction Temperature TJ 120 °C Operating Temperature TCASE - 40 + 100 °C Storage Temperature TSTG - 40 + 100 °C Lead Solder Temperature *2 TSLD + 265 °C *1 duty=1%, pulse width = 10 µs *2 must be completed within 3 seconds Electro-Optical Characteristics (T CASE =25°C) *1 measured by S3584,08 *2 measured by CIE127-2007 Condition B Parameter Symbol Conditions Values Min. Typ. Max. Unit Peak Wavelength λP IF=20mA 535 555 nm Half Width ∆λ IF=20mA 39 nm Forward Voltage VF IF=20mA 3.4 3.8 V VFP IFP=100mA 4.3 Radiated Power *1 PO IF=20mA 3.2 mW IFP=100mA 11 Radiant Intensity *2 IE IF=20mA 21 mW/sr IFP=100mA 76 Luminous Flux ΦV IF=20mA 2200 mlm Viewing Angle φ IF=20mA 28 deg. Rise Time tR IF=20mA 15 ns Fall Time tF IF=20mA 30 ns |
类似零件编号 - LED545-33 |
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类似说明 - LED545-33 |
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