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2SC4151 数据表(PDF) 6 Page - Powerex Power Semiconductors |
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2SC4151 数据表(HTML) 6 Page - Powerex Power Semiconductors |
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6 / 7 page ![]() M57161L-01 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 M57161L-01 Hybrid IC for IGBT Gate Driver 6 sufficiently high ripple current rating. Theexample circuit inFigure5uses a 150µF low impedance type electrolytic for the input decoupling capacitor. The driver’s built-in DC-DC converter produces isolated +17.4V and -6.5V outputs at pins 19 and 17 with respect to the common pin 18. These voltages are supplied to driver’s output stage on pins 22 and 24 to provide high current gate drive with on and off driving voltages of +15.5V and –5V. In order to deliver the pulse current necessary for efficient switching, the output of the isolated DC-DC converter (pins 17, 18 and 19) must be decoupled using a combination of low impedance electrolytic and film capacitors. In Figure 5 the 150µF low impedance electrolytics and a 2.2µF stacked film or multi-layer ceramic are included for this purpose. These capacitors should be located as close as possible to the pins of the hybrid gate driver. When driving small modules it is usually acceptable to use smaller capacitors provided that that they have sufficient ripple current capability and low enough impedance. However, very large modules and parallel module applications may require 500µF or more to achieve low enough impedance and high enough ripple current capability. The series gate resistor (RG) should be selected based on the application requirements and module type being used. Details for selecting RG can be found in Powerex IGBT module application notes. The minimum allowable RG for the M57161L-01 is 2.2Ω. If a smaller value is desired, a booster stage must be added. (See Section 7.) The back-to-back zener diodes from G to E that are normally recommended are not required with F-Series IGBT modules because they are included as part of the modules internal RTC circuit. Pin 28 is used to adjust the RTC detection time and total shut-down time. This adjustment was described in detail in Section 3. To extend the trip time, CTRIP can be connected as shown in Figure 5. This capacitor should be located as close as possible to the pins of the gate driver. Pin 27 is an active low fault status signal. When a fault (short circuit or undervoltage) is detected this pin is pulleddowntothe VEE supply. In Figure5alow speed optocoupler is utilized to provide isolation of the fault feedback signal. The optocoupler is connected from the common of the isolated power supply (pin 18) to the fault signal pin using a 470 Ω current limiting resistor. When a fault occurs a current of approximately 10mA will flow in the optocoupler’s LED. A 3.3k Ω resistor connected across the opto’s photodiode helps to improve noise immunity. 6. Control Power Supply Requirements The control power supply current required for the M57161L-01 is primarily a function of the gate charge (QG)of the IGBT module being driven and the switching frequency. Figure 6 shows the 15V control power supply current (ID)as a function of IGBT module gate charge for various switching frequencies. This curve provides an estimate of the required current. The actual current will vary depending on the operating conditions of the IGBT module. To accommodate these variations, it is recommended that the 15V supply be designed to provide 150% - 200% of the value indicated in Figure 6. Figure 5 M57161L-01 Typical Application Circuit M57161L-01 150 µF + VD + 1 6 24 22 17 19 + RTC 29 27 + Vin FO + 150 µF 2.2 µF RG CTRIP 150 µF G E IGBT Module 3.3k 470 Ω - Figure 6 Supply Current versus Gate Charge 0 100 200 300 400 500 0 2 468 10 QG (µC) 5kHz 10 kHz 15 kHz 20 kHz VGE = +15V/-5V |
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