2SC4151 datasheet(7/7 Pages) POWEREX

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M57161L-01

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

M57161L-01

Hybrid IC for IGBT Gate Driver

7. Driving Large IGBT Modules

In order to achieve efficient, reliable operation of large IGBT modules or multiple parallel connected

modules, a gate driver with high pulse current capability is required.

The M57161L-01 hybrid gate driver is

designed to perform this function as a stand-alone unit in most applications. However, for optimum performance

with very large modules, it may be necessary to add an output booster stage to the hybrid gate driver. A booster

stage is required when the desired series gate resistance is lower than the minimum RG specified on the gate

driver’s data sheet.

Figure 7 is a schematic showing the M57161L-01 with an added booster stage consisting of a

complimentary transistor pair driving two parallel connected IGBT modules. The NPN and PNP booster transistors

(Q1, Q2) should be fast switching (tf < 200nS) and have sufficient current gain to deliver the desired peak output

current. Table 1 lists some combinations of booster transistors that can be used in the circuit shown in Figure 7.

The series resistor (RO) connected from the driver’s output on pin 23 to the booster stage is used to limit the peak

base current and help to damp oscillations in the booster stage. In most applications RO should be set so that RO

=hfe xRG, where hfe is the minimum gain of the booster stage transistors and RG is the series gate resistance.

Note that if the application has parallel modules then the effective RG must be used in the above equation. For

example, if there are 2 modules in parallel then RO =hfe xRG/2. When parallel connected modules are used with

the M57161L-01 it is also necessary to include a diode OR circuit so that the gates of the paralleled modules can

be independently monitored. An example of the diode OR is also shown in Figure 7.

Table 1 Booster Stage Transistors

NPN

PNP

Peak

current

VCEO

Manufacturer

Package

MJD44H11

MJD45H11

15A

80V

ON Semiconductor

D2-Pac

D44VH10

D45VH10

20A

80V

ON Semiconductor

TO-220

MJE15030

MJE15031

15A

150V

ON Semiconductor

TO-220

2SC4151

2SA1601

30A

40V

Shindengen

Isolated TO-220

ZTX851

ZTX951

20A

80V

Zetex

TO-92

Figure 7 M57161L-01 Typical Application Circuit With Booster Stage

M57161L-01

470

µF

VIN

470

µF

2.2

µF

CTRIP

150

µF

RTC

3.3k

470

Ω

4.7k

Ω

RTC

2N4401

1N4148

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