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IPS032G 数据表(PDF) 3 Page - International Rectifier |
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IPS032G 数据表(HTML) 3 Page - International Rectifier |
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3 / 11 page ![]() IPS031G/IPS032G www.irf.com 3 Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Units Vds (max) Continuous Drain to Source voltage — 35 VIH High level input voltage 4 6 VIL Low level input voltage 0 0.5 Ids Continuous drain current Tamb=85 oC (TAmbient = 85oC, IN = 5V, rth = 100oC/W, Tj = 125oC) IPS031G — 2.2 A (TAmbient = 85oC, IN = 5V, rth = 85oC/W, Tj = 125oC) IPS032G — 1.65 Rin Recommended resistor in series with IN pin 0.2 5 k Ω Tr-in(max) Max recommended rise time for IN signal (see fig. 2) — 1 µS Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) 0 1 kHz V Symbol Parameter Min. Typ. Max. Units Test Conditions Rds(on) ON state resistance Tj = 25 oC 204560 Rds(on) ON state resistance Tj = 150 oC— 75 100 Idss Drain to source leakage current 0 0.5 25 Vcc = 14V, Tj = 25 oC @Tj=25oC Idss2 Drain to source leakage current 0 5 50 Vcc = 40V, Tj = 25 oC @Tj=25oC V clamp 1 Drain to source clamp voltage 1 47 52 56 Id = 20mA (see Fig.3 & 4) V clamp 2 Drain to source clamp voltage 2 50 53 60 Vin clamp IN to source clamp voltage 7 8.1 9.5 Iin = 1 mA Vth IN threshold voltage 1 1.6 2 Id = 50mA, Vds = 14V Iin, -on ON state IN positive current 25 90 200 Vin = 5V Iin, -off OFF state IN positive current 50 130 250 Vin = 5V over-current triggered Static Electrical Characteristics (Tj = 25 oC unless otherwise specified.) m Ω Vin = 5V, Ids = 1A Id=Ishutdown (see Fig.3 & 4) V µA µA Switching Electrical Characteristics Vcc = 14V, Resistive Load = 5Ω (IPS031), Resistive Load = 3Ω (IPS031S), Rinput = 50Ω, 100µs pulse,Tj = 25 oC, (unless otherwise specified). Symbol Parameter Min. Typ. Max. Units Test Conditions Ton Turn-on delay time 0.05 0.3 0.6 Tr Rise time 0.4 1 2 Trf Time to 130% final Rds(on) — 8 — Toff Turn-off delay time 0.8 2 3.5 Tf Fall time 0.5 1.5 2.5 Qin Total gate charge — 1.1 — nC Vin = 5V See figure 2 See figure 2 µs |
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