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IPS032G 数据表(PDF) 3 Page - International Rectifier

部件名 IPS032G
功能描述  SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH
PDF  11 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IPS032G 数据表(HTML) 3 Page - International Rectifier

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IPS031G/IPS032G
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3
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Units
Vds (max) Continuous Drain to Source voltage
35
VIH
High level input voltage
4
6
VIL
Low level input voltage
0
0.5
Ids
Continuous drain current
Tamb=85
oC
(TAmbient = 85oC, IN = 5V, rth = 100oC/W, Tj = 125oC) IPS031G
2.2
A
(TAmbient = 85oC, IN = 5V, rth = 85oC/W, Tj = 125oC) IPS032G
1.65
Rin
Recommended resistor in series with IN pin
0.2
5
k
Tr-in(max) Max recommended rise time for IN signal (see fig. 2)
1
µS
Fr-Isc (2)
Max. frequency in short circuit condition (Vcc = 14V)
0
1
kHz
V
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Rds(on)
ON state resistance Tj = 25
oC
204560
Rds(on)
ON state resistance Tj = 150
oC—
75
100
Idss
Drain to source leakage current
0
0.5
25
Vcc = 14V, Tj = 25
oC
@Tj=25oC
Idss2
Drain to source leakage current
0
5
50
Vcc = 40V, Tj = 25
oC
@Tj=25oC
V clamp 1 Drain to source clamp voltage 1
47
52
56
Id = 20mA (see Fig.3 & 4)
V clamp 2 Drain to source clamp voltage 2
50
53
60
Vin clamp IN to source clamp voltage
7
8.1
9.5
Iin = 1 mA
Vth
IN threshold voltage
1
1.6
2
Id = 50mA, Vds = 14V
Iin, -on
ON state IN positive current
25
90
200
Vin = 5V
Iin, -off
OFF state IN positive current
50
130
250
Vin = 5V
over-current triggered
Static Electrical Characteristics
(Tj = 25
oC unless otherwise specified.)
m
Vin = 5V, Ids = 1A
Id=Ishutdown (see Fig.3 & 4)
V
µA
µA
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 5Ω (IPS031), Resistive Load = 3Ω (IPS031S), Rinput = 50Ω, 100µs pulse,Tj = 25
oC, (unless
otherwise specified).
Symbol Parameter
Min.
Typ.
Max. Units Test Conditions
Ton
Turn-on delay time
0.05
0.3
0.6
Tr
Rise time
0.4
1
2
Trf
Time to 130% final Rds(on)
8
Toff
Turn-off delay time
0.8
2
3.5
Tf
Fall time
0.5
1.5
2.5
Qin
Total gate charge
1.1
nC
Vin = 5V
See figure 2
See figure 2
µs



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