Features

IPS031G/IPS032G

SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH

Data Sheet No.PD 60151-J

Description

The IPS031G/IPS032G are fully protected single/dual

low side SMART POWER MOSFETs that feature over-

current, over-temperature, ESD protection and drain

to source active clamp.These devices combine a

HEXFET® POWER MOSFET and a gate driver. They

offer full protection and high reliability required in

harsh environments. The driver allows short switch-

ing times and provides efficient protection by turning

off the power MOSFET when the temperature ex-

ceeds 165

The device restarts once the input is cycled. The

avalanche capability is significantly enhanced by the

active clamp and covers most inductive load demag-

netizations.

Product Summary

70m

Ω (max)

50V

Ishutdown

12A

1.5

µs

Typical Connection

S

Q

Load

D

S

control

IN

R in series

(if needed)

Logic signal

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Packages

8-Lead SOIC

IPS031G

16-Lead SOIC

IPS032G

(Dual)

(Refer to lead assignment for correct pin assignment)