IRFR3518 datasheet(4/10 Pages) IRF

部件名	IRFR3518

功能描述	HEXFET Power MOSFET

PDF	10 Pages

Scroll/Zoom	100%

制造商	IRF [International Rectifier]

网页	http://www.irf.com

标志

4 / 10 page

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IRFR3518/IRFU3518

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

203040

QG Total Gate Charge (nC)

VDS= 40V

VDS= 64V

VDS= 16V

ID= 18A

0.1

100

1000

0.0

0.5

1.0

1.5

2.0

,Source-to-Drain Voltage (V)

= 0 V

T = 175

T = 25

100

1000

VDS, Drain-to-Source Voltage (V)

0.1

100

1000

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R DS(on)

100µsec

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs+ Cgd, CdsSHORTED

Crss = Cgd

Coss = Cds+ Cgd

Coss

Crss

Ciss

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