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数据搜索系统，热门电子元器件搜索 |
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IRFR3518 数据表(PDF) 1 Page - International Rectifier |
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IRFR3518 数据表(HTML) 1 Page - International Rectifier |
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1 / 10 page  www.irf.com 1 09/23/02 IRFR3518 IRFU3518 HEXFET® Power MOSFET VDSS RDS(on) max ID 80V 29m W 30A Parameter Max. Units VDS Drain-to-Source Voltage 80 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 27 A IDM Pulsed Drain Current 150 PD @TC = 25°C Power Dissipation 110 W Linear Derating Factor 0.71 W/°C dv/dt Peak Diode Recovery dv/dt 5.2 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Notes through are on page 10 PD - 94523 Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current D-Pak IRFR3518 I-Pak IRFU3518 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.4 RθJA Junction-to-Ambient (PCB mount) ––– 40 °C/W RθJA Junction-to-Ambient ––– 110 Thermal Resistance |
类似零件编号 - IRFR3518 |
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类似说明 - IRFR3518 |
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