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QID4520002 数据表(PDF) 4 Page - Powerex Power Semiconductors

部件名 QID4520002
功能描述  Dual IGBT
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  POWEREX [Powerex Power Semiconductors]
网页  http://www.pwrx.com
标志 POWEREX - Powerex Power Semiconductors

QID4520002 数据表(HTML) 4 Page - Powerex Power Semiconductors

  QID4520002 Datasheet HTML 1Page - Powerex Power Semiconductors QID4520002 Datasheet HTML 2Page - Powerex Power Semiconductors QID4520002 Datasheet HTML 3Page - Powerex Power Semiconductors QID4520002 Datasheet HTML 4Page - Powerex Power Semiconductors QID4520002 Datasheet HTML 5Page - Powerex Power Semiconductors QID4520002 Datasheet HTML 6Page - Powerex Power Semiconductors  
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QID4520002
Dual IGBT HVIGBT Module
200 Amperes/4500 Volts
4
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Preliminary
11/14 Rev. 3
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
EMITTER-COLLECTOR VOLTAGE, V
EC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
VCE = VGE
Tj = 25°C
Tj = 150°C
COLLECTOR-EMITTER VOLTAGE, V
CE, (VOLTS)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
2
4
8
6
82.5
0
VGE = 16V
11
15
13
10
Tj = 25°C
165.0
250.0
330.0
412.5
82.5
0
165.0
250.0
330.0
412.5
82.5
0
165.0
250.0
330.0
412.5
82.5
0
165.0
250.0
330.0
412.5
0
2
4
8
6
0
4
8
16
12
GATE-EMITTER VOLTAGE, V
GE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
VGE = 15V
0
5
2
4
3
1
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C



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