QID4520002 datasheet(2/6 Pages) POWEREX

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QID4520002

Dual IGBT HVIGBT Module

200 Amperes/4500 Volts

Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

Preliminary

11/14 Rev. 3

Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.

The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.

Absolute Maximum Ratings,

Tj = 25 °C unless otherwise specified

Ratings

Symbol

QID4520002

Units

Junction Temperature

-40 to 150

°C

Storage Temperature

Tstg

-40 to 125

°C

Collector-Emitter Voltage (VGE = 0V, Tj = -40 to +125°C)

VCES

4500

Volts

Collector-Emitter Voltage (VGE = 0V, Tj = -50°C)

VCES

4400

Volts

Gate-Emitter Voltage (VCE = 0V)

VGES

±20

Volts

Collector Current, DC (TC = 82°C)

200

Amperes

Peak Collector Current (Pulse)

ICM

400*

Amperes

Diode Forward Current**

200

Amperes

Diode Forward Surge Current** (Pulse)

IFM

400*

Amperes

I2t for Diode (t = 10ms)

I2t

kA2sec

Maximum Collector Dissipation (TC = 25°C, IGBT Part, Tj(max) ≤ 150°C)

2250

Watts

Mounting Torque, M6 Terminal Screws

—

in-lb

Mounting Torque, M6 Mounting Screws

—

in-lb

Module Weight (Typical)

—

900

Grams

Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)

Viso

9.0

kVolts

Partial Discharge

Qpd

(V1 = 4800 VRMS, V2 = 3500 VRMS, f = 60Hz (Acc. to IEC 1287))

Maximum Short-Circuit Pulse Width,

tpsc

µs

(VCC ≤ 3200V, VGE = ±15V, RG(off) ≥ 60Ω, Tj = 125°C)

Electrical Characteristics,

Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Collector-Cutoff Current

ICES

VCE = VCES, VGE = 0V, Tj = 125°C

—

2.7

VCE = VCES, VGE = 0V, Tj = 150°C

—

15.0

Gate Leakage Current

IGES

VGE = VGES, VCE = 0V

–0.5

—

0.5

µA

Gate-Emitter Threshold Voltage

VGE(th)

IC = 20mA, VCE = 10V

5.8

6.3

6.8

Volts

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 200A, VGE = 15V, Tj = 25°C

—

3.5

—

Volts

IC = 200A, VGE = 15V, Tj = 125°C

—

4.4

5.1

Volts

Total Gate Charge

VCC = 2800V, IC = 200A, VGE = 15V

—

2.25

—

µC

Emitter-Collector Voltage**

VEC

IE = 200A, VGE = 0V, Tj = 25°C

—

2.5

—

Volts

IE = 200A, VGE = 0V, Tj = 125°C

—

2.8

3.4

Volts

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

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