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MAT02 数据表(PDF) 4 Page - Analog Devices |
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MAT02 数据表(HTML) 4 Page - Analog Devices |
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4 / 6 page ![]() MAT02 Table I(cont’d) Parameter See notes at end of table Symbol Conditions 1/ Sub- group Limit Min Limit Max Units Collector Base Leakage Current ICBO VCB = 40V 1 200 pA Collector Emitter Leakage Current 4/ ICES VCE = 40V, VBE = 0V 1 200 Collector-Collector Leakage Current 4/ ICC VCC = 40V 1 200 Bias Current IB VCB = 0V, 40V 1 25 nA 2, 3 60 Collector Saturation Voltage VCESAT IC = 1mA, IB = 100A 1 0.1 V Breakdown Voltage BVCEO IC = 100A 1 40 Noise voltage density en IC=1mA, fO = 10Hz 7 2 Hz nV/ VCB=0V fO = 100Hz 1 fO = 1000Hz 1 fO = 10KHz 1 TABLE I NOTES: 1/ VCB = 15V; IC = 10A, unless otherwise specified. 2/ Current gain match (hFE) is defined as: C FE B FE h I min ) I ( 100 h 3/ Measured at IC = 10A and guaranteed by design over 1A IC 1mA. 4/ ICC and ICES are verified by measurement of ICBO. 5/ Guaranteed by VOS test BE OS OS OS V V for T V TCV T = 298°K for TA = +25°C. |
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