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MAT02 数据表(PDF) 3 Page - Analog Devices |
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MAT02 数据表(HTML) 3 Page - Analog Devices |
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3 / 6 page ![]() MAT02 3.1 Thermal Characteristics: Thermal Resistance, TO-78 (H) Package Junction-to-Case (JC) = 45°C/W Max Junction-to-Ambient (JA) = 150°C/W Max Derate linearly at 6.67 mW/°C for ambient temperatures above 70°C. Terminal Connections 1/ Terminal 6 lead TO 1 C1 2 B1 3 E1 4 E2 5 B2 6 C2 1/ Substrate is connected to case on TO-78 package. Substrate is normally connected to the most negative circuit potential, but can be floated. Table I Parameter See notes at end of table Symbol Conditions 1/ Sub- group Limit Min Limit Max Units Current Gain hFE IC = 1mA; VCB = 0V, 40V 1 500 2, 3 275 IC = 100A; VCB = 0V, 40V 1 500 IC = 100A; VCB = 15V 2, 3 225 IC = 10A; VCB = 0V, 40V 1 400 IC = 10A; VCB = 15V 2, 3 175 IC = 1A; VCB = 0V, 40V 1 300 IC = 1A; VCB = 15V 2, 3 150 Current Gain Match 2/ h FE IC=10A,100A,1mA; VCB=0V 1 2 % Offset Voltage VOS VCB = 0V 1 50 V 2, 3 80 Offset Voltage vs. Temperature 5/ TCVOS VCB = 0V 0.3 V/°C Offset Voltage vs. VCB 3/ V OS /VCB VCB = 0V, 40V 1 25 V Offset Voltage vs. Collector Current V OS/IC VCB = 0V; IC = 10A, 1mA 1 25 Input Offset Current IOS VCB = 0V, 40V 1 0.6 nA 2, 3 9.0 Offset Current vs. VCB I OS /VCB VCB = 0V, 40V 1 70 pA/V Bulk Emitter Resistance rBE 1 0.5 |
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