IXTY1R4N120P datasheet(1/5 Pages) IXYS

部件名	IXTY1R4N120P

功能描述	N-Channel Enhancement Mode Avalanche Rated

PDF	5 Pages

Scroll/Zoom	100%

制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

标志

1 / 5 page

DS99871D(8/17)

IXTY1R4N120PHV

IXTY1R4N120P

IXTA1R4N120P

IXTP1R4N120P

V

DSS

= 1200V

I

D25

= 1.4A

R

DS(on) 

 13



Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

1200

V

GS(th)

V

DS = VGS, ID = 100μA

2.5

4.5

V

I

GSS

V

GS = 30V, VDS = 0V

100 nA

I

DSS

V

DS = VDSS, VGS = 0V

5

A

T

J = 125C

300

A

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1, 2

10.5

13.0



Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

1200

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

1200

V

GSS

Continuous

30

V

GSM

Transient

40

V

I

D25

T

C = 25C

1.4

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

3.0

A

I

A

T

C = 25C

1.4

A

E

AS

T

C = 25C

150

mJ

dv/dt

I

S

 I

DM, VDD  VDSS, TJ  150°C

10

V/ns

P

D

T

C = 25C86

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

F

C

Mounting Force (TO-263)

10..65 / 2.2..14.6

N/lb

M

d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in

Weight

TO-252 / HV

0.35

g

TO-263

2.50

g

TO-220

3.00

g

Features



International Standard Packages



Low Q

G



Avalanche Rated



Low Package Inductance



Fast Intrinsic Rectifier

Advantages



High Power Density



Easy to Mount



Space Savings

Applications



DC-DC Converters



Switch-Mode and Resonant-Mode

Power Supplies



AC and DC Motor Drives





Discharge Circiuts in Lasers, Spark

Igniters, RF Generators





High Voltage Pulse Power

Applications

PolarTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

G = Gate

D

= Drain

S = Source

Tab = Drain

G D

S

TO-220

(IXTP)

D (Tab)

TO-263

(IXTA)

G

D (Tab)

S

TO-252

(IXTY)

G

S

D (Tab)

TO-252

(IXTY..HV)

G

S

D (Tab)

类似零件编号 - IXTY1R4N120P

制造商	部件名	数据表	功能描述
IXYS Corporation	IXTY1R4N120P	130Kb / 4P	N-Channel Enhancement Mode
IXYS Corporation	IXTY1R4N120P	368Kb / 6P	N-Channel Enhancement Mode Power MOSFET
Inchange Semiconductor ...	IXTY1R4N120P	318Kb / 2P	isc N-Channel MOSFET Transistor
IXYS Corporation	IXTY1R4N120PHV	368Kb / 6P	N-Channel Enhancement Mode Power MOSFET
IXYS Corporation	IXTY1R4N120PHV	368Kb / 6P	N-Channel Enhancement Mode Power MOSFET

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类似说明 - IXTY1R4N120P

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More results

IXTY1R4N120P 数据表(PDF) 1 Page - IXYS Corporation

IXTY1R4N120P 数据表(HTML) 1 Page - IXYS Corporation

类似零件编号 - IXTY1R4N120P

类似说明 - IXTY1R4N120P

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IXTY1R4N120P 数据表(PDF) 1 Page - IXYS Corporation

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类似零件编号 - IXTY1R4N120P

类似说明 - IXTY1R4N120P

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