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IXTY1R4N120P 数据表(PDF) 4 Page - IXYS Corporation |
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IXTY1R4N120P 数据表(HTML) 4 Page - IXYS Corporation |
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4 / 5 page ![]() IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTY1R4N120PHV IXTA1R4N120P IXTY1R4N120P IXTP1R4N120P Fig. 7. Input Admittance 0.0 0.5 1.0 1.5 2.0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGS - Volts TJ = 125 oC 25 oC - 40 oC Fig. 8. Transconductance 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID - Amperes TJ = - 40 oC 125 oC 25 oC Fig. 9. Forward Voltage Drop of Intrinsic Diode 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 VSD - Volts TJ = 125 oC TJ = 25 oC Fig. 10. Gate Charge 0 1 2 3 4 5 6 7 8 9 10 04 8 12 16 20 24 QG - NanoCoulombs VDS = 600V I D = 0.7A I G = 10mA Fig. 11. Capacitance 1 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 12. Maximum Transient Thermal Impedance 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds |
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