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L5953 数据表(PDF) 6 Page - STMicroelectronics |
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L5953 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 24 page ![]() L5953 6/24 DIAGNOSTIC PARAMETERS HSD2 Vsat, peak Saturation Voltage IO = 0.2A 250 mV Ilim Current Limit 300 mA Lload Load Inductance 100 mH VOLTAGE WARNING Vst Sense Low Threshold 1.245 1.275 1.305 V Vsth Sense Threshold Hysteresis 35 45 60 mV VSL Sense Output Low Voltage Io = 1mA 0.4 V ISH Sense Output Leakage VW = 5V; VSI ≥ 1.5V 10 µA ISI Sense Input Current VSI=5V 1 µA RESET VRT Reset Threshold Voltage 0.95 x VSTBY V VRTH Reset Threhold Hysteresis 0.02 x VSTBY V VRL Reset Output Voltage Io = 1mA 0.4 V IRH Reset Output Leakage VRT = VSTBY 10 µA VCTth Delay Comparator Threshold 0.5 x VSTBY VCThy Delay Comparator Threshold Hysteresys 180 mV ICT1 Timing Capacitor Output Source Current 7.5 µA RCT2 Timing Capacitor Output Pull- Down equivalent Resistor 150 Ω Symbol Parameter Test Condition Min. Typ. Max. Unit HSD1W1 High Side Driver 1 Overcurrent Warning activation 0.95 A HSD1W2 High Side Driver 1 Open Load Warning activation HSD1 output voltage in test mode 3 V HSD1W2 TEST High Side Driver 1 VDD Short Warning activation in test mode HSD1 in test mode Measure VVDD-LIN-VHSD1 1.5 V HSD2W1 High Side Driver 2 Overcurrent Warning activation 0.7 A ELECTRICAL CHARACTERISTCS (continued) ( Tamb = 25°C, VDD = 14.4V) Symbol Parameter Test Condition Min. Typ. Max. Unit |
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