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LP28601 数据表(PDF) 4 Page - Lowpower Semiconductor inc |
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LP28601 数据表(HTML) 4 Page - Lowpower Semiconductor inc |
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4 / 12 page  LP28601-02 Mar.-2017 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 4 of 12 Preliminary Datasheet LP28601 Electrical Characteristics (The specifications which apply over the full operating temperature range, TA=25℃, VBUS=5V, unless otherwise noted.) Parameter Test Conditions Measured Min Typ Max Units VBUS, VSYS,VDD Input voltage VBUS 4.4 14 V VBUS port protection threshold VBUS Rising UVLO 4.15 4.25 4.35 V VBUS Falling 3.95 4.05 4.15 V Input voltage regulation reference VREG 2.3 2.4 2.5 V Minimum output voltage set for VSYS SYSSEL=float, VBAT=2V 3.3 V SYSSEL=high, VBAT=2V 3.5 V SYSSEL=low, VBAT=2V 3.0 V VDDP/VDDA 5 V Power Path Management VDC Power by USB/Adapter MOSFET RDSON 1A Current Load R(VBUS,VDC) 50 mΩ Switch between VSYS and VBAT VBAT=4.2V, VBUS Absent, IBAT=3A R(VSYS, VBAT) 40 mΩ Quiescent Currents VBUS Current OTG=float IBUS 750 µA OTG=low 20 µA VBUS=4V 80 µA Battery Discharge Current in Standby mode VBAT=4.2V, VBOOST Floating VBUS Absent IBAT 15 µA Battery Discharge Current in boost mode VBAT=4.2V, VBUS=5V, IOUT=0A IBOOST 110 µA Charger Controller VISET Voltage in TRICK Mode and Low VBAT VBAT<1.4V VISET 0.04 V 1.4V< VBAT <VTRICKL 0.2 V VBAT voltage VB=float, RISET=1K, IBAT=100mA 4.158 4.2 4.242 V VB=high, RISET=1K, IBAT=100mA 4.3 V VB=low, RISET=1K, IBAT=100mA 4.35 V Charge Current in CC Mode RISET=1K,VBAT=3.6V IBAT 1500 mA RISET=0.5K,VBAT=3.6V 3000 mA VISET Voltage in CC Mode VISET 1.45 1.5 1.55 V Trickle Charge Voltage Threshold VBAT rising VTRIKL 2.8 2.9 3.0 V Trickle Charge Voltage Threshold Hysteresis VTRIKL_HYS 200 mV Charge Current in Trickle Charge Condition VBAT＜1.4V ITRIKL 15 mA 1.4V＜VBAT＜VTRIKL,RISET=1K 200 mA 1.4V＜VBAT＜VTRIKL,RISET=0.5K 400 mA End of Charger Current 13.3 %IBAT Adapter Current Limit VILIM 1.9 2 2.1 V Current Limit through VBUS RILIM=1K ILIMIT 1.1 A RILIM=0.5K 2.2 A Switch Frequency VBUS=5V,VBAT=3.6V,RISET=0.5K 1.2 MHz Trickle Charge Timer Default register, wake-up mode 90 min Charge Timer Default register, CC+CV mode 10 hr Recharge Threshold VBAT falling 150 mV STAT Low Level Open drain pulled up with 5mA STAT - - 0.2 V Leakage Current to STAT VBAT=4.3V, IBAT=0 0.6 1 µA FULL Low Level Open drain pulled up with 5mA FULL 0.2 V Leakage Current to FULL VBAT=4.3V IBAT=0 0.4 1 µA Charging Enable Time OTG: L→H TC_DELAY 6 ms Temperature sense comparators High Voltage Threshold Temp fault at VNTC>VLTF VLTF 2.45 2.50 2.55 V Low Voltage Threshold Temp fault at VNTC<VHTF VHTF 0.48 0.50 0.52 V Temperature Sense Current Sense RNTC=10k INTC 94 100 106 µA Charging and OTG Boost Temperature Shutdown Temperature rising 145 ℃ Hysteresis falling 25 ℃ Boost Controller Section Boost Output Voltage VBAT=4.2V VOUT 4.9V 5.05 5.2V V Boost Switch Frequency VBAT=3V,IOUT=1A 1.4 MHz Boost UVLO VBAT rising VBAT 2.9 V VBAT falling 2.6 V Boost Enable Time VBOOST: H→L TB_DELAY 370 µs |
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