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SC1485ITSTRT 数据表(PDF) 9 Page - Semtech Corporation |
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SC1485ITSTRT 数据表(HTML) 9 Page - Semtech Corporation |
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9 / 17 page ![]() 9 2004 Semtech Corp. www.semtech.com SC1485 POWER MANAGEMENT Applications Information (Cont.) Current Limit Circuit Current limiting of the SC1485 can be accomplished in two ways. First, the device can implement on-state re- sistance of the low-side MOSFET as the current sensing element (RDS ON sensing). Second, the device can accept a resistive element in the low-side source (R SENSE, resistor sensing). The second method offers greater accuracy of the current limit threshold over RDS ON sensing, at the added expense of a sense resistor and associated effi- ciency loss. Whether RDS ON sensing or RSENSE resistor sensing is used, a scaling resistor between LX and ILIM is required. This resistor, R ILIM, is connected to a 10uA current source within the SC1485 through the ILIM pin. This sets a volt- age drop equal to 10uA times R ILIM. As the current in- creases through the lower MOSFET, the phase pin volt- age will decrease until the offset voltage caused by R ILIM is reached and ILIM < PGND. At this point an over-cur- rent trip signal is issued. Current limiting will prevent the firing of a DH on-pulse, thereby reducing the switching frequency. As the frequency decreases, the output volt- age will drop until an under-voltage shutdown is reached. The current sensing circuit actually limits the inductor valley current (see Figure 2). This means that if the cur- rent limit is set to 10A, the peak current through the inductor would be 10A plus the peak ripple current, and the average current through the inductor would be 10A plus 1/2 the peak-to-peak ripple current. The equations for setting the valley current and calculating the average current through the inductor are shown below: () ON ILIM OC RDS R A 10 Valley IL • µ = () ( ) 2 I Valley IL Average IL L OC OC ∆ + = FIGURE 2 FIGURE 3 The schematic of RDS ON sensing circuit is shown in Fig- ure 3 with R ILIM = R1 and RDSON of Q2. Similarly, for resistor sensing, the current through the lower MOSFET and the source sense resistor develops a voltage that opposes the voltage developed across R ILIM.When the voltage developed across the RSENSE resis- tor reaches voltage drop across R ILIM, an over-current ex- ists and the high side MOSFET will not be allowed to turn on. The over-current equation when using an external sense resistor is: () SENSE ILIM OC R R A 10 Valley IL • µ = Schematic of resistor sensing circuit is shown in Figure 4 with R ILIM = R1 and RSENSE = R4. R4 C2 D1 R1 + C3 +5V D2 SC1485 FBK Q1 Q2 +VIN R3 1 2 3 4 5 6 7 PGND DL VDDP ILIM LX DH BST + C1 L1 0.5V - 5.5V R2 FIGURE 4 ILIMIT ILOAD IPEAK TIME Valley Current-Limit Threshold Point C2 0.5V - 5.5V Q1 SC1485 R2 + C1 R1 1 2 3 4 5 6 7 PGND DL VDDP ILIM LX DH BST L1 FBK +VIN Q2 D1 +5V + C3 R3 D2 |
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