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ADL5511ACPZ-R7 数据表(PDF) 22 Page - Analog Devices |
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ADL5511ACPZ-R7 数据表(HTML) 22 Page - Analog Devices |
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22 / 29 page ![]() ADL5511 Data Sheet Rev. C | Page 22 of 29 Figure 52. VENV Response to a 20 MHz LTE Carrier with a PEP of 19 dBm that has been Triggered to Capture the Envelope’s Peak Level VRMS AND VENV OUTPUT OFFSET The 900 MHz RF power sweeps in Figure 53 and Figure 54 show distributions of the VRMS and VENV outputs voltages for multiple devices at 25°C. The VRMS output response flattens out at approximately −30 dBm while the various VENV response traces begin to fanout unpredictably (Figure 4 and Figure 7 show this behavior at other frequencies). While these plots suggest that operation at input levels down to −30 dBm is feasible, account must also be taken for variations over temperature. Figure 10 to Figure 38 show how the linearity error starts to increase below input levels of −20 dBm (the size of the error varies between VENV and VRMS and with frequency). Figure 53. VRMS Output vs. Input Level Distribution of 50 Devices, 900 MHz Frequency Figure 54. VENV Output vs. Input Level Distribution of 50 Devices, 900 MHz Frequency 1 10 100 1000 10000 –40 –30 –20 –10 0 10 INPUT (dBm) 1 10 100 1000 10000 –40 –30 –20 –10 0 10 INPUT (dBm) |
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