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DS92001TM 数据表(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 DS92001TM
功能描述  3.3V B/LVDS-BLVDS Buffer
PDF  12 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

DS92001TM 数据表(HTML) 2 Page - National Semiconductor (TI)

  DS92001TM Datasheet HTML 1Page - National Semiconductor (TI) DS92001TM Datasheet HTML 2Page - National Semiconductor (TI) DS92001TM Datasheet HTML 3Page - National Semiconductor (TI) DS92001TM Datasheet HTML 4Page - National Semiconductor (TI) DS92001TM Datasheet HTML 5Page - National Semiconductor (TI) DS92001TM Datasheet HTML 6Page - National Semiconductor (TI) DS92001TM Datasheet HTML 7Page - National Semiconductor (TI) DS92001TM Datasheet HTML 8Page - National Semiconductor (TI) DS92001TM Datasheet HTML 9Page - National Semiconductor (TI) Next Button
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC)
−0.3V to +4V
LVCMOS/LVTTL Input Voltage
(EN)
−0.3V to (V
CC + 0.3V)
LVCMOS/LVTTL Output Voltage
(LOS)
−0.3V to (V
CC + 0.3V)
B/LVDS Receiver Input Voltage
(IN+, IN−)
−0.3V to +4V
BLVDS Driver Output Voltage
(OUT+, OUT−)
−0.3V to +4V
BLVDS Output Short Circuit
Current
Continuous
Junction Temperature
+150˚C
Storage Temperature Range
−65˚C to +150˚C
Lead Temperature Range
Soldering (4 sec.)
+260˚C
Maximum Package Power Dissipation at 25˚C
M Package
726 mW
Derate M Package
5.8 mW/˚C above +25˚C
LDA Package
2.44 W
Derate LDA Package
19.49 mW/˚C above
+25˚C
ESD Ratings
(HBM, 1.5k
Ω, 100pF)
≥2.5kV
(EIAJ, 0
Ω, 200pF)
≥250V
Recommended Operating
Conditions
Min
Typ
Max
Units
Supply Voltage (V
CC)
3.0
3.3
3.6
V
Receiver Differential Input
Voltage (V
ID) with
V
CM=1.2V
0.1
2.4
|V|
Operating Free Air
Temperature
−40
+25
+85
˚C
B/LVDS Input Rise/Fall
20% to 80%
220
ns
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified. (Notes 2, 3)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
LVCMOS/LVTTL DC SPECIFICATIONS (EN)
V
IH
High Level Input Voltage
2.0
V
CC
V
V
IL
Low Level Input Voltage
GND
0.8
V
I
IH
High Level Input Current
V
IN =VCC or 2.0V
+7
+20
µA
I
IL
Low Level Input Current
V
IN = GND or 0.8V
−10
±1
+10
µA
V
CL
Input Clamp Voltage
I
CL = −18 mA
−0.6
−1.5
V
LVCMOS/LVTTL DC SPECIFICATIONS (LOS)
V
OH
Output High Voltage
I
OH = −4mA, VID
≥ |200mV|, V
CM = 1.2V
V
CC
−0.4V
3.1
V
CC
V
V
OL
Output Low Voltage
(Note 5)
I
OL = 4mA, VID = 0V, VCM = 1.2V
0.15
0.4
V
I
OSHLOS
Output Short Circuit Current
(output high)(Note 4)
V
OUT = 0V, 200mV
≤ V
ID
≤ 2V, V
CM = 1.5V
−35
−60
mA
BLVDS OUTPUT DC SPECIFICATIONS (OUT)
|V
OD|
Differential Output Voltage
(Note 2)
R
L =27
250
350
500
mV
R
L =50
350
450
600
mV
∆V
OD
Change in Magnitude of V
OD
for Complimentary Output
States
RL=27
Ω or 50Ω Figure 1, Figure 2
20
mV
V
OS
Offset Voltage
R
L =27
Ω or R
L =50
1.1
1.25
1.375
V
∆V
OS
Change in Magnitude of V
OS
for Complimentary Output
States
Figure 1
220
mV
I
OZ
Output TRI-STATE Current
EN = 0V, V
OUT =VCC or GND
−20
±5
+20
µA
www.national.com
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