MMRF1007H datasheet(2/17 Pages) NXP

2 / 17 page

RF Device Data

Freescale Semiconductor, Inc.

MMRF1007HR5 MMRF1007HSR5

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (1)

Unit

Thermal Resistance, Junction to Case

Case Temperature 67C, 1000 W Peak, 128 sec Pulse Width, 10% Duty Cycle,

50 Vdc, IDQ = 150 mA

Case Temperature 62C, Mode--S Pulse Train, 80 Pulses of 32 sec On, 18 sec

Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle, 50 Vdc, IDQ = 150 mA

ZJC

0.02

0.07

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

Table 4. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (2)

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

Adc

Drain--Source Breakdown Voltage

(VGS =0 Vdc, ID = 165 mA)

V(BR)DSS

110

—

Vdc

Zero Gate Voltage Drain Leakage Current

(VDS =50 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS = 100 Vdc, VGS =0 Vdc)

IDSS

—

100

Adc

On Characteristics

Gate Threshold Voltage (2)

(VDS =10 Vdc, ID = 1000 Adc)

VGS(th)

0.9

1.6

2.4

Vdc

Gate Quiescent Voltage (3)

(VDD =50 Vdc, ID = 150 mAdc, Measured in Functional Test)

VGS(Q)

1.5

2.2

Vdc

Drain--Source On--Voltage (2)

(VGS =10 Vdc, ID =2.7 Adc)

VDS(on)

—

0.15

—

Vdc

Dynamic Characteristics (2)

Reverse Transfer Capacitance

(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Crss

—

1.27

—

Output Capacitance

(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)

Coss

—

86.7

—

Input Capacitance

(VDS =50 Vdc, VGS =0 Vdc  30 mV(rms)ac @ 1 MHz)

Ciss

—

539

—

Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.),

f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle

Power Gain

Gps

Drain Efficiency

D

—

Input Return Loss

IRL

—

--23

--9

1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

2. Each side of device measured separately.

3. Measurement made with device in push--pull configuration.

(continued)

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