MMRF1007H datasheet(7/17 Pages) NXP

7 / 17 page

MMRF1007HR5 MMRF1007HSR5

RF Device Data

Freescale Semiconductor, Inc.

TYPICAL CHARACTERISTICS

100

Pout, OUTPUT POWER (WATTS) PEAK

Figure 10. Power Gain and Drain Efficiency

versus Output Power

D

1000

10000

25_C

TC =--30_C

85_C

Gps

VDD =50 Vdc

IDQ = 150 mA

f = 1030 MHz

Pulse Width = 128 sec

Duty Cycle = 10%

250

109

TJ, JUNCTION TEMPERATURE (C)

Figure 11. MTTF versus Junction Temperature --

128 sec, 10% Duty Cycle

This above graph displays calculated MTTF in hours when the device

is operated at VDD =50 Vdc,Pout = 1000 W Peak, Pulse Width = 128 sec,

Duty Cycle = 10%, and D = 56%.

MTTF calculator available at http://www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

107

106

104

110

130

150

170

190

210

230

105

108

250

109

TJ, JUNCTION TEMPERATURE (C)

Figure 12. MTTF versus Junction Temperature --

Mode--S

This above graph displays calculated MTTF in hours when the device

is operated at VDD =50 Vdc,Pout = 1000 W Peak, Mode--S Pulse Train,

Pulse Width = 32 sec, Duty Cycle = 6.4%, and D = 59%.

MTTF calculator available at http://www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

107

106

104

110

130

150

170

190

210

230

105

108

MMRF1007H 数据表(PDF) 7 Page - NXP Semiconductors

MMRF1007H 数据表(HTML) 7 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

数据表下载