2)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage (Note 1)

6.0V

Storage Temperature

−65˚C to +150˚C

Voltage at Any Input Pin

V

≥ V ≥ GND - 0.3V

Power Dissipation (Note 3)

Internally Limited

ESD Susceptibility (Note 4)

2.0kV

ESD Susceptibility (Note 5)

200V

Junction Temperature (T

150˚C

Thermal Resistance

θ

190˚C/W

θ

56˚C/W

θ

180˚C/W

θ

63˚C/W

θ

12˚C/W

Soldering Information

See AN-1112 "microSMD Wafers Level Chip Scale

Package."

Operating Ratings (Note 2)

Temperature Range

T

MIN

≤ T

A

≤ T

MAX

−40˚C

≤ T

A

≤ 85˚C

Supply Voltage (MSOP & LD)

2.7V

≤ V

DD

≤ 5.5V

Supply Voltage (ITL) (Note11)

2.7V

≤ V

DD

≤ 3.8V

Electrical Characteristics V

(Notes 1, 2, 11)

The following specifications apply for V

wise specified. Limits apply for T

Symbol

Parameter

Conditions

LM4665

Units

(Limits)

Typical

Limit

(Note 6)

(Notes 7, 8)

I

DD

Quiescent Power Supply Current

V

V

Ω + 22µH Load

14

14.5

mA

mA

I

SD

Shutdown Current

V

0.1

5.0

µA (max)

V

SDIH

Shutdown Voltage Input High

V

1.2

1.4

V (min)

V

SDIL

Shutdown Voltage Input Low

V

1.1

0.4

V (max)

V

SDIH

Shutdown Voltage Input High

V

1.2

1.4

V (min)

V

SDIL

Shutdown Voltage Input Low

V

1.1

0.4

V (max)

V

GSIH

Gain Select Input High

1.2

1.4

V (min)

V

GSIL

Gain Select Input Low

1.1

0.4

V (max)

A

V

Closed Loop Gain

V

6

5.5

6.5

dB (min)

dB (max)

A

V

Closed Loop Gain

V

12

11.5

12.5

dB (min)

dB (max)

V

OS

Output Offset Voltage

10

mV

T

WU

Wake-up Time

5

ms

P

o

Output Power

THD+N = 3% (max), f

1.4

W

THD+N

Total Harmonic Distortion+Noise

P

0.8

%

R

IN

Differential Input Resistance

V

100

k

Ω

V

65

k

Ω

PSRR

Power Supply Rejection Ratio

V

f

Inputs Terminated

52

dB

CMRR

Common Mode Rejection Ratio

V

f

43

dB

e

N

Output Noise Voltage

A-Weighted filter, V

350

µV

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