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AFIC901N 数据表(PDF) 2 Page - NXP Semiconductors |
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AFIC901N 数据表(HTML) 2 Page - NXP Semiconductors |
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2 / 20 page ![]() 2 RF Device Data Freescale Semiconductor, Inc. AFIC901N Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +30 Vdc Gate--Source Voltage VGS –6.0, +12 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature Range (1,2) TJ –40 to +150 C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 78C, 30 dBm CW, 520 MHz Stage 1, 7.5 Vdc, IDQ1 =8 mA Stage 2, 7.5 Vdc, IDQ2 =24 mA RJC 32 9.4 C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1A, passes 250 V Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) II, passes 200 V Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com/RF/calculators. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. |
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