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AFIC901N 数据表(PDF) 6 Page - NXP Semiconductors |
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AFIC901N 数据表(HTML) 6 Page - NXP Semiconductors |
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6 / 20 page ![]() 6 RF Device Data Freescale Semiconductor, Inc. AFIC901N TYPICAL CHARACTERISTICS — 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT 175 135 Gps FREQUENCY (MHz) Figure 4. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power 160 155 150 145 140 28 D 33 32 27 34 31 30 165 170 32 28 29 26 30 31 29 60 80 70 50 40 35 Pout VDD =7.5 V, Pin =0 dBm, IDQ1 =10 mA, IDQ2 =30 mA 2 1.5 1.5 VGS2, GATE--SOURCE VOLTAGE (VOLTS) Figure 5. Output Power versus Gate--Source Voltage, 2nd Stage 4.0 3.5 3.0 2.5 2.0 0.5 2.5 1 0 VDD =7.5 V, IDQ1 =10mA,f=155 MHz Pin =0 dBm Pin =–3 dBm 1.5 VGS2, GATE--SOURCE VOLTAGE (VOLTS) Detail A 2.5 2.0 0.25 0.5 0 VDD =7.5 V, IDQ1 =10mA,f=155 MHz Detail A Pin =–3 dBm Pin =0 dBm D Pin, INPUT POWER (dBm) 26 36 –8 20 50 –6 33 31 30 20 32 30 32 29 27 –4 35 40 –2 4 34 30 28 02 28 26 24 22 VDD =7.5 Vdc, lDQ1 =10 mA, lDQ2 =30 mA Figure 6. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency 23 25 24 60 70 80 Gps Pout 175 MHz 135 MHz 155 MHz 175 MHz 135 MHz 175 MHz 135 MHz 155 MHz 155 MHz |
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