2

RF Device Data

Freescale Semiconductor, Inc.

AFT09S200W02SR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

–0.5, +70

Vdc

Gate--Source Voltage

–6.0, +10

Vdc

Operating Voltage

32, +0

Vdc

Storage Temperature Range

–65 to +150

C

Case Operating Temperature Range

–40 to +125

C

–40 to +225

C

Derate above 25C

CW

226

1.1

W

W/C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

0.34

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

2

Machine Model (per EIA/JESD22--A115)

B

Charge Device Model (per JESD22--C101)

IV

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

Adc

Zero Gate Voltage Drain Leakage Current

—

—

5

Adc

Gate--Source Leakage Current

—

—

1

Adc

On Characteristics

Gate Threshold Voltage

1.0

1.5

2.0

Vdc

Gate Quiescent Voltage

—

2.15

—

Vdc

3.2

4.3

5.2

Vdc

Drain--Source On--Voltage

0.1

0.26

0.3

Vdc

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf/calculators.

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