AFT09S200W02SR3

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 56 W RF power LDMOS transistor is designed for cellular base station

applications requiring very wide instantaneous bandwidth capability covering

the frequency range of 920 to 960 MHz.

Probability on CCDF.

Frequency

(dB)

(%)

Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

920 MHz

19.6

34.1

6.9

–35.2

–28

940 MHz

19.6

34.7

7.0

–35.4

–18

960 MHz

19.4

35.6

6.8

–34.7

–12

Features

 Designed for Wide Instantaneous Bandwidth Applications

 Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

 Designed for Digital Predistortion Error Correction Systems

 Able to Withstand Extremely High Output VSWR and Broadband

Operating Conditions

 Optimized for Doherty Applications

Document Number: AFT09S200W02S

Rev. 0, 4/2015

Freescale Semiconductor

Technical Data

920–960 MHz, 56 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR

AFT09S200W02SR3

Figure 1. Pin Connections

NI--780S--2L

(Top View)

 Freescale Semiconductor, Inc., 2015. All rights reserved.