TPS54980

SLVS452A − FEBRUARY 2003 − REVISED FEBRUARY 2005

www.ti.com

4

ELECTRICAL CHARACTERISTICS (continued)

over operating free-air temperature range unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

ERROR AMPLIFIER

Error amplifier open loop voltage gain

1 k

Ω COMP to AGND(1)

90

110

dB

Error amplifier unity gain bandwidth

Parallel 10 k

Ω, 160 pF COMP to AGND(1)

3

5

MHz

Error amplifier common mode input voltage

range

Powered by internal LDO(1)

0

VBIAS

V

Input bias current, VSENSE

VSENSE = Vref

60

250

nA

Output voltage slew rate (symmetric), COMP

1.0

1.4

V/

µs

PWM COMPARATOR

PWM comparator propagation delay time,

PWM comparator input to PH pin (excluding

deadtime)

10-mV overdrive(1)

70

85

ns

ENABLE

Enable threshold voltage, ENA

0.82

1.20

1.40

V

Enable hysteresis voltage, ENA

0.03

V

Falling edge deglitch, ENA(1)

2.5

µs

Leakage current, ENA

VI = 3.6 V

1

µA

POWER GOOD

Power good threshold voltage

VSENSE falling

90

%Vref

Power good hysteresis voltage(1)

3

%Vref

Power good falling edge deglitch(1)

35

µs

Output saturation voltage, PWRGD

I(sink) = 2.5 mA

0.18

0.3

V

Leakage current, PWRGD

VI = 3.6 V

1

µA

CURRENT LIMIT

Current limit trip point

VI = 3.6 V Output shorted(1)

11

15

A

Current limit leading edge blanking time

100

ns

Current limit total response time

200

ns

THERMAL SHUTDOWN

Thermal shutdown trip point(1)

135

150

165

°C

Thermal shutdown hysteresis(1)

10

°C

OUTPUT POWER MOSFETS

rDS(on) Power MOSFET switches

VI = 3.6 V(4)

14

28

m

Ω

rDS(on) Power MOSFET switches

VI = 3 V(4)

15

30

m

Ω

TRACKIN

Input offset, TRACKIN

VSENSE = TRACKIN = 1.25 V

−1.5

1.5

mV

Input voltage range, TRACKIN

See Note 1

0

Vref

V

(1) Specified by design

(2) Static resistive loads only

(3) Specified by the circuit used in Figure 9

(4) Matched MOSFETs low-side rDS(on) production tested, high-side rDS(on) specified by design