1/8

June 2003

STGF10NB60SD

N-CHANNEL 10A - 600V TO-220FP

PowerMESH™ IGBT

s

HIGHT INPUT IMPEDANCE (VOLTAGE

DRIVEN)

s

LOW ON-VOLTAGE DROP

s

HIGH CURRENT CAPABILITY

s

OFF LOSSES INCLUDE TAIL CURRENT

s

CO-PACKAGED WITH TURBOSWITCH™

ANTIPARALLEL DIODE

DESCRIPTION

Using the latest high voltage technology based on a

patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, the

performances. The suffix “S” identifies a family

optimized achieve minimum on-voltage drop for low

frequency applications (<1kHz).

APPLICATIONS

s

LIGHT DIMMER

s

STATIC RELAYS

s

MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

TYPE

@25°C

@100°C

STGF10NB60SD

600

< 1.8 V10 A

Symbol

Parameter

Value

Unit

600

V

Reverse Battery Protection

20

V

Gate-Emitter Voltage

± 20

V

20

A

10

A

Collector Current (pulsed)

80

A

25

W

Derating Factor

0.2

W/°C

Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25°C)

2500

V

Storage Temperature

–65 to 150

°C

Max. Operating Junction Temperature

150

°C

TO-220FP

1

2

3

INTERNAL SCHEMATIC DIAGRAM