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STGF10NB60SD 数据表(PDF) 3 Page - STMicroelectronics

部件名 STGF10NB60SD
功能描述  N-CHANNEL 10A - 600V TO-220FP PowerMESH IGBT
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGF10NB60SD 数据表(HTML) 3 Page - STMicroelectronics

  STGF10NB60SD Datasheet HTML 1Page - STMicroelectronics STGF10NB60SD Datasheet HTML 2Page - STMicroelectronics STGF10NB60SD Datasheet HTML 3Page - STMicroelectronics STGF10NB60SD Datasheet HTML 4Page - STMicroelectronics STGF10NB60SD Datasheet HTML 5Page - STMicroelectronics STGF10NB60SD Datasheet HTML 6Page - STMicroelectronics STGF10NB60SD Datasheet HTML 7Page - STMicroelectronics STGF10NB60SD Datasheet HTML 8Page - STMicroelectronics  
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STGF10NB60SD
Switching Off Safe Operating Area
SWITCHING ON
SWITCHING OFF
COLLECTOR-EMITTER DIODE
(q)Pulsed: Pulse duration = 300
µs, duty cycle 1.5 %.
(1)Pulse width limited by max. junction temperature.
(**)Losses Include Also the Tail
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VCC =480 V, IC =10 A
RG =1KΩ ,VGE =15V
0.7
µs
tr
Rise Time
0.46
µs
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching Losses
VCC= 480 V, IC =10 A
RG=1KΩ,VGE =15 V
8
0.6
A/µs
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tc
Cross-over Time
Vclamp = 480 V, IC =10 A,
RGE =1K Ω ,VGE =15 V
2.2
µs
tr(Voff)
Off Voltage Rise Time
1.2
µs
tf
Fall Time
1.2
µs
Eoff(**)
Turn-off Switching Loss
5.0
mJ
tc
Cross-over Time
Vclamp = 480 V, IC =10 A,
RGE =1KΩ ,VGE =15V
Tj = 125 °C
3.8
µs
tr(Voff)
Off Voltage Rise Time
1.2
µs
tf
Fall Time
1.9
µs
Eoff(**)
Turn-off Switching Loss
8.0
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
If
Ifm
Forward Current
Forward Current pulsed
7
56
A
A
Vf
Forward On-Voltage
If = 3.5 A
If = 3.5 A, Tj = 125 °C
1.4
1.15
1.9
V
V
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If =7A ,VR =20 V,
Tj =125°C, di/dt = 100A/
µs
50
70
2.7
ns
nC
A
Thermal Impedance



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