GND

I/O2

I/O1

ESDS312

GND

ESDS314

I/O4

I/O1

I/O3

I/O1

8

ESDS312, ESDS314

SLVSEG9B – MAY 2018 – REVISED SEPTEMBER 2018

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Product Folder Links: ESDS312 ESDS314

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7 Detailed Description

7.1 Overview

The ESDS314, ESDS312 devices are unidirectional ESD Protection Diode with a low capacitance. These

devices can dissipate high surge currents upto 25 A (8/20 µs) and ESD strikes above the maximum level

specified by the IEC 61000-4-2 International Standard. The low capacitance makes this device ideal for

protecting high-speed signal interfaces such as Ethernet 10/100/1000 Mbps and general purpose high speed

data lines.

7.2 Functional Block Diagram

7.3 Feature Description

7.3.1 IEC 61000-4-4 EFT Protection

The I/O pins of ESDS314 and ESDS312 can withstand surge events (IEC 61000-4-5, 8/20 µs waveform) up to

25 A and 170 W. These devices also provide ESD protection up to ±30-kV contact and ±30-kV air gap per IEC

61000-4-2 standard. The I/O pins can withstand an electrical fast transient burst of up to 80 A (IEC 61000-4-4

5/50 ns waveform, 4 kV with 50-

Ω impedance). The capacitance between each I/O pin to ground is 4.5 pF

(typical) and 5.5 pF (maximum). This device supports data rates up to 1 Gbps.

The reverse DC breakdown voltage of each I/O pin is a minimum of 4.5 V. This ensures that sensitive equipment

is protected from surges above the reverse standoff voltage of 3.6 V. The I/O pins feature an ultra-low leakage

current of 100 nA (maximum) with a bias of 3.6 V. This device features an industrial operating range of –40°C to

+125°C.

7.4 Device Functional Modes

below 0.7 V. During ESD events, voltages as high as ±30 kV (air) can be directed to ground via the internal

diode network. When the voltages on the protected line fall below the trigger levels of ESDS314, ESDS312

(usually within a few nano-seconds) the devices reverts to passive.