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ESDS312DBVR 数据表(PDF) 4 Page - Texas Instruments

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部件名 ESDS312DBVR
功能描述  Data-Line Surge and ESD Protection Diode Array
PDF  21 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

ESDS312DBVR 数据表(HTML) 4 Page - Texas Instruments

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ESDS312, ESDS314
SLVSEG9B – MAY 2018 – REVISED SEPTEMBER 2018
www.ti.com
Product Folder Links: ESDS312 ESDS314
Submit Documentation Feedback
Copyright © 2018, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
IEC 61000-4-4
Electrical Fast
Transient
Peak Power at 25 °C
80
A
IEC 61000-4-5
Surge (tp 8/20
µs
Peak Power at 25 °C
170
W
Peak Current at 25 °C
25
A
TA
Operating free-air temperature
–40
125
°C
Tstg
Storage temperature
–65
155
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. [Following sentence
optional; see the wiki.] Manufacturing with less than 500-V HBM is possible with the necessary precautions. [Following sentence
optional; see the wiki.] Pins listed as ±WWW V and/or ±XXX V may actually have higher performance.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. [Following sentence
optional; see the wiki.] Manufacturing with less than 250-V CDM is possible with the necessary precautions. [Following sentence
optional; see the wiki.] Pins listed as ±YYY V and/or ±ZZZ V may actually have higher performance.
6.2 ESD Ratings -JEDEC Specifications
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human body model (HBM), per
ANSI/ESDA/JEDEC JS-001, allpins(1)
±2500
V
Charged device model (CDM), per JEDEC
specificationJESD22-C101, all pins(2)
±1000
6.3 ESD Ratings - IEC Specifications
VALUE
UNIT
V(ESD)
Electrostatic discharge
IEC 61000-4-2 Contact Discharge, all pins
±30000
V
IEC 61000-4-2 Air Discharge, all pins
±30000
6.4 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VIN
Input voltage
0
3.6
V
TA
Operating Free Air Temperature
–40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Thermal Information
THERMAL METRIC (1)
ESDS312
ESDS314
UNIT
DBV (SOT-23)
DBV (SOT-23)
5 PINS
5 PINS
RθJA
Junction-to-ambient thermal resistance
163.9
127.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
113.4
78.9
°C/W
RθJB
Junction-to-board thermal resistance
76.9
43.9
°C/W
ΨJT
Junction-to-top characterization parameter
59.8
24.5
°C/W
ΨJB
Junction-to-board characterization parameter
76.8
43.7
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
N/A
°C/W



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