5

ESDS312, ESDS314

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SLVSEG9B – MAY 2018 – REVISED SEPTEMBER 2018

Product Folder Links: ESDS312 ESDS314

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(1)

VBRF and VBRR are defined as the voltage obtained at 1 mA when sweeping the voltage up, before the device latches into the

snapback state

(2)

VHOLD is defined as the voltage when 1 mA is applied, after the device has successfully latched into the snapback state.

6.6 Electrical Characteristics

At TA = 25°C unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Reverse stand-off voltage

temperature range

3.6

V

Leakage current at 3.6 V

5

50

nA

4.5

7.5

V

Forward Voltage, GND to IO

0.8

V

5

V

5

V

5.6

V

6.5

V

1

V

2.1

V

3.6

V

5.5

V

2.2

V

Line capacitance, Any IO to GND

4.5

5.5

pF

Variation of line capacitance

mV, f = 1 MHz

0.05

0.1

pF

Line-to-line capacitance

2.25

2.75

pF