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RU1HP60S-R 数据表(PDF) 4 Page - Ruichips Semiconductor Co., Ltd |
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RU1HP60S-R 数据表(HTML) 4 Page - Ruichips Semiconductor Co., Ltd |
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4 / 8 page ![]() RU1HP60S Ti l Ch t i ti Typical Characteristics 50 60 70 Drain Current 120 140 160 180 200 Power Dissipation 0 10 20 30 40 VGS=-10V 0 20 40 60 80 100 120 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 125 150 Drain Current Ids=-60A 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 100 Safe Operation Area 25 50 75 100 0.1 1 10 10µs 100µs 1ms 10ms DC 0 0123456789 10 -VGS - Gate-Source Voltage (V) 0.01 0.01 0.1 1 10 100 -VDS - Drain-Source Voltage (V) TC=25°C Thermal Transient Impedance 0.1 1 S Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 0.001 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Single Pulse RθJC=0.8°C/W Ruichips Semiconductor Co., Ltd Rev. B– AUG., 2014 4 www.ruichips.com |
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