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RU1HP60S-R 数据表(PDF) 5 Page - Ruichips Semiconductor Co., Ltd

部件名 RU1HP60S-R
功能描述  P-Channel Advanced Power MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  RUICHIPS [Ruichips Semiconductor Co., Ltd]
网页  http://www.ruichips.com
标志 RUICHIPS - Ruichips Semiconductor Co., Ltd

RU1HP60S-R 数据表(HTML) 5 Page - Ruichips Semiconductor Co., Ltd

  RU1HP60S-R Datasheet HTML 1Page - Ruichips Semiconductor Co., Ltd RU1HP60S-R Datasheet HTML 2Page - Ruichips Semiconductor Co., Ltd RU1HP60S-R Datasheet HTML 3Page - Ruichips Semiconductor Co., Ltd RU1HP60S-R Datasheet HTML 4Page - Ruichips Semiconductor Co., Ltd RU1HP60S-R Datasheet HTML 5Page - Ruichips Semiconductor Co., Ltd RU1HP60S-R Datasheet HTML 6Page - Ruichips Semiconductor Co., Ltd RU1HP60S-R Datasheet HTML 7Page - Ruichips Semiconductor Co., Ltd RU1HP60S-R Datasheet HTML 8Page - Ruichips Semiconductor Co., Ltd  
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RU1HP60S
Ti
l Ch
t i ti
Typical Characteristics
60
80
100
Output Characteristics
-6V
-10V
-8V
60
80
100
Drain-Source On Resistance
0
20
40
0
1
2
3
4
5
-3V
-5V
0
20
40
0
30
60
90
120
-10V
0
1
2
3
4
5
-VDS - Drain-Source Voltage (V)
0
30
60
90
120
-ID - Drain Current (A)
2.0
2.5
Drain-Source On Resistance
VGS=-10V
ID=-60A
10
100
Source-Drain Diode Forward
TJ=175°C
0.5
1.0
1.5
TJ=25°C
Rds(on)=18mΩ
0.1
1
10
TJ=25°C
0.0
-50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
()
0.1
0.3
0.6
0.9
1.2
1.5
1.8
-VSD - Source-Drain Voltage (V)
6000
Capacitance
Frequency=1 0MHz
9
10
Gate Charge
VDS=-80V
1500
3000
4500
Ciss
Coss
Frequency=1.0MHz
3
4
5
6
7
8
9
VDS 80V
IDS=-60A
0
1500
1
10
100
-VDS - Drain-Source Voltage (V)
Coss
Crss
0
1
2
3
0
50
100
150
200
QG - Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. B– AUG., 2014
5
www.ruichips.com



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