PXAC241002FC-V1-R2 datasheet(1/8 Pages) CREE

部件名	PXAC241002FC-V1-R2

功能描述	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 ??2400 MHz

PDF	8 Pages

Scroll/Zoom	100%

制造商	CREE [Cree, Inc]

网页	http://www.cree.com/

标志

1 / 8 page

Rev. 02, 2018-10-04

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

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Features

•

Broadband internal input and output matching

•

Asymmetric Doherty design

- Main: P1dB = 40 W Typ

- Peak: P1dB = 60 W Typ

•

Typical Pulsed CW performance, 2400 MHz, 28 V,

160 µsec pulse width, 10% duty cycle (Doherty

conﬁguration)

- Output power at P1dB = 34 W

- Output power at P3dB = 81 W

- Efﬁciency = 53%

- Gain = 15.7 dB

•

Capable of handling 10:1 VSWR @28 V, 80 W (CW)

output power

•

Integrated ESD protection

•

Human Body Model class 1C (per ANSI/ESDA/

JEDEC JS-001)

•

Low thermal resistance

•

Pb-free and RoHS compliant

Description

The PXAC241002FC is a 100-watt LDMOS FET with an asymmetric

design, intended for use in multi-stantdard cellular power ampliﬁer

applications in the 2300 to 2400 MHz frequency band. Features in-

clude dual-path design, input and output matching, high gain and a

thermally-enhanced package with earless ﬂange. Manufactured with

Wolfspeed's advanced LDMOS process, this device provides excellent

thermal performance and superior reliability.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture)

VDD = 28 V, IDQ = 230 mA, VGS(PEAK) = 1.5 V, POUT = 15 W avg, ƒ = 2400 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

14.8

15.5

—

dB

Drain Efficiency



D

43

45

—

%

Adjacent Channel Power Ratio

ACPR

—

–28

–26

dBc

Output PAR@0.01% CCDF

OPAR

7.0

7.6

—

dB

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

V

DD = 28 V, IDQ(main) = 230 mA,

VGS(peak) = 1.5 V, ƒ = 2400 MHz

3GPP WCDMA signal,

10 dB PAR, 3.84 MHz bandwidth

Gain

Efficiency

PAR @ 0.01% CCDF

c241002fc-gr1

PXAC241002FC

Thermally-Enhanced High Power RF LDMOS FET

100 W, 28 V, 2300 – 2400 MHz

PXAC241002FC

Package H-37248C-4

类似零件编号 - PXAC241002FC-V1-R2

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PXAC241702FC	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22
Cree, Inc	PXAC241702FC	577Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz
Infineon Technologies A...	PXAC241702FCV1R0	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22
	PXAC241702FCV1R0XTMA1	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22
	PXAC241702FCV1R250	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22

More results

类似说明 - PXAC241002FC-V1-R2

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTF240101S	243Kb / 12P	Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz Rev. 05, 2007-04-12
	PXAC261002FC	162Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz Rev. 03.3, 2016-06-15
	PXAC241702FC	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz Rev. 02.1, 2016-06-22
	PTFC210202FC	655Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 ??2200 MHz Rev. 03.4, 2016-06-22
	PTAC240502FC	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 ??2400 MHz Rev. 02.3, 2016-06-21
Cree, Inc	PXAC241702FC	577Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz
	PXAC261002FC	634Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz
	PTAC240502FC	606Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 ??2400 MHz
	PTFC210202FC	700Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 - 2200 MHz
WOLFSPEED, INC.	PTAC240502FC_V1	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 28 V, 2300 – 2400 MHz Rev. 05, 2023-06-28